铬膜制备及其膜内残余应力研究
Research on Preparation of Chromium Film and Residual Stress in Film
张 伟1, 任凤章1,2, 马战红1, 苏娟华1
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作者单位：(1. 河南科技大学 材料科学与工程学院, 河南 洛阳 471003; 2.河南省有色金属材料科学与加工技术重点实验室, 河南 洛阳 471003
中文关键字：镀铬； 铬膜； 残余应力； TFDC电子理论
英文关键字：chromium electroplating; chromium film; residual stress; TFDC electron theory
中文摘要：对六价镀铬的工艺进行研究，在45 ℃、电流密度为15 A·dm-2时电沉积出光亮平整、无缺陷的铬膜。在此基础上在纯铁基体上电沉积制备出一系列不同厚度的铬薄膜，并对其残余应力进行测量和研究。结果表明：Cr膜的平均残余应力和分布残余应力均为拉应力，由于Cr膜在较薄时残余应力的骤降，可判断出其残余应力主要来自于Cr膜的界面应力，与基于Thomas-Fermi-Dirac-Cheng (TFDC)电子理论的判断结果相一致。
英文摘要：The technology of hexavalent Cr electroplating was studided. It is founed that the chromium films electrodeposited at 45 ℃ and the current density of 15 A·dm-2 are bright and smooth and have no defects. According to the technology, a series of chromium films with different thickness were deposited on the pure ferrous substrates. The residual stresses in the chromium films were measured and analyzed. The results show that both average residual stress and distributional residual stress in the films are tensile stress. Because of the residual stress in the thinner film abruptly dropping, the residual stress comes mainly from the interface stress of the chromium film. This conclusion is consistent with the judgment of the TFDC (Thomas-Fermi-Dirac- Cheng's electron theory).