XU Xiaowei, WANG Fei, RAN Ruiying, et al. Simulation Study of Thermal Field of 213 mm Large-diameter Si Crystal Growing by Czochralski MethodJ. Hot Working Technology, 2023, 52(9): 72-75. DOI: 10.14158/j.cnki.1001-3814.20210696
    Citation: XU Xiaowei, WANG Fei, RAN Ruiying, et al. Simulation Study of Thermal Field of 213 mm Large-diameter Si Crystal Growing by Czochralski MethodJ. Hot Working Technology, 2023, 52(9): 72-75. DOI: 10.14158/j.cnki.1001-3814.20210696

    Simulation Study of Thermal Field of 213 mm Large-diameter Si Crystal Growing by Czochralski Method

    • Based on the finite volume method, the temperature field in the single crystal furnace cavity was obtained, and the influence of heating power, crystal rotation speed and crucible rotation speed on the liquid-solid interface was studied.The calculation results show that the heating power has a significant influence on the liquid-solid interface and the thermal field, and precise control of the heating power is very important for a stable liquid-solid interface; within a certain range, the increase of the crystal rotation speed will cause the liquid-solid interface to move upwards, while the crucible rotation speed has little effect on the liquid-solid interface.
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