YANG Loujiang, PANG Xingzhi, XU Zhengbing, et al. First-principles Investigation of Zr, Si and V Adsorption on Ti B2(0001) SurfaceJ. Hot Working Technology, 2025, 54(20): 35-41. DOI: 10.14158/j.cnki.1001-3814.20223585
    Citation: YANG Loujiang, PANG Xingzhi, XU Zhengbing, et al. First-principles Investigation of Zr, Si and V Adsorption on Ti B2(0001) SurfaceJ. Hot Working Technology, 2025, 54(20): 35-41. DOI: 10.14158/j.cnki.1001-3814.20223585

    First-principles Investigation of Zr, Si and V Adsorption on Ti B2(0001) Surface

    • The atomic structures, adsorption properties and electronic structures of Zr, Si and V atoms on Ti B2(0001)surface were comprehensively investigated using first-principles computational approach. The calculated results show that the adsorption energy of Zr and V is lowest at bridge 1 on the surface of Ti B2(0001). However, Si has the lowest adsorption energy at the hcp. Zr, Si and V undergo hybridization during adsorption on the Ti B2(0001) surface, which is mainly due to the contribution of Zr-4d, Si-3p, V-3p and Ti-3d orbitals. The bonding between Zr-Ti, Si-Ti and V-Ti is mainly covalent bonds,the covalent bonds in descending order of strength are Si-Ti, Zr-Ti, V-Ti.
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